Thin silicon-on-insulator double-diffused metal oxide semiconductor transistor

The method of claim 8 wherein thermally diffusing B ions from the source into the channel first thickness includes:

• heating the substrate to a temperature in a range of 950° C. to 1050° C.;
• and,
• heating for a time duration in a range of 10 minutes to 10 hours.

The method of claim 10 wherein forming the source and drain regions includes:

• performing an n ion implant into the stepped gate, source, and drain regions;
• and,
• forming n+ doped source and drain regions having a doping density in a range of 1×1019 to 1×1021 cm−3, with the drain separated from the stepped gate by a distance in the range of 0 to 5 micrometers.

The DMOST of claim 12 wherein the source region first thickness is in a range of 10 to 100 nanometers (nm).

The DMOST of claim 17 wherein the channel first thickness area is p doped to a density in a range of 1×1016 to 1×1018 per cubic cm−3.

The DMOST of claim 18 wherein the source region is n+ doped to density in a range of 1×1019 to 1×1021 cm−3;

• wherein the drain region is separated from the stepped gate by a distance in a range of 0 to 5 micrometers, n+ doped to a density in a range of 1×1019 to 1×1021 cm−3;
• and,
• wherein the stepped gate is n+ doped to a density in a range of 1×1019 to 1×1021 cm−3.