Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsShigeru Kusunoki, Koichi Mochizuki, Minoru Kawakami
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Abstract
A semiconductor device has a semiconductor substrate, an insulating film, a semiconductor element and a resistance element. The semiconductor substrate has a first trench. The insulating film covers an inner surface of the first trench. The semiconductor element has an electrode. The resistance element is electrically connected to the electrode to form a resistance to a current flowing through the electrode, and is arranged in the first trench with the insulating film therebetween. Thereby, the semiconductor device can have a resistance element that has a small footprint and can pass a large current with high reliability.
Claims10
A semiconductor device comprising:
- a semiconductor substrate having a first trench;
- an insulating film covering an inner surface of said first trench, a semiconductor element having an electrode;
- and
- a resistance element electrically connected to said electrode to form a resistance to a current flowing through said electrode, and arranged in said first trench with said insulating film therebetween.
A semiconductor device comprising:
- a semiconductor substrate;
- a semiconductor element having a channel region formed of a part of said semiconductor substrate, and a plurality of gate electrodes for controlling said channel region;
- a gate pad electrically connected to said plurality of gate electrodes;
- a gate interconnection electrically connecting at least one of said plurality of gate electrodes to said gate pad;
- and
- a plurality of resistance elements inserted in said gate interconnection, wherein
- said resistance element connected to at least one of said plurality of gate electrodes relatively near said gate pad has a larger resistance value than the resistance element connected to at least one of said plurality of gate electrodes relatively remote from said gate pad.
A semiconductor device comprising:
- a semiconductor substrate having a trench,
- a semiconductor element having a channel region formed of a part of said semiconductor substrate, and an electrode;
- an insulating film covering an inner surface of said trench;
- a first interconnection electrically connected to said electrode, and arranged in said trench with said insulating film therebetween;
- and
- a second interconnection arranged on said trench, and connected electrically in parallel to said first interconnection.
Dependencies are inferred from the claim text.