Semiconductor device and a method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorSung Kil Chun
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate provided with an active region including a gate forming area, a source forming area and a drain forming area. A recess is formed in the gate forming area. A gate is formed over the gate forming area that is formed with the recess and includes an insulation layer formed at an upper end portion of a side wall of the recess that is in contact with the source forming area. A source area and a drain area are formed in the active region on opposite sides of the gate.
Claims27
A semiconductor device comprising:
- a semiconductor substrate comprising an active region including a gate forming area, a source forming area and a drain forming area, the gate forming area being formed with a recess;
- a gate formed over the gate forming area formed with the recess, the gate comprising an insulation layer formed at an upper end portion of a side wall of the recess, the upper end portion of the side wall contacting the source forming area;
- and
- a source area and a drain area formed in the active region on opposite sides of the gate.
A method for manufacturing a semiconductor device, the method comprising:
- performing source/drain ion implantation on a semiconductor substrate having an active region including a gate forming area to form a source area and a drain area;
- forming a recess in the gate forming area of the semiconductor substrate;
- forming a gate insulation layer over the semiconductor substrate including the recess;
- forming a first gate conductive layer over the gate insulation layer to fill in the recess;
- etching the first gate conductive layer to remove a portion of the first gate conductive layer formed at an upper end portion of the side wall of the recess that is in contact with the source area;
- forming an insulation layer at the upper end portion of the side wall of the recess from which the first gate conductive layer is removed;
- forming a second gate conductive layer over the insulation layer and the first gate conductive layer;
- forming a third gate conductive layer and a hard mask layer over the second gate conductive layer;
- and
- etching the hard mask layer, the third gate conductive layer, the second gate conductive layer, the first gate conductive layer, the insulation layer, and the gate insulation layer to form a gate.
A method for manufacturing a gate of a semiconductor device, comprising:
- forming a recess in a gate forming area of a semiconductor substrate having an active region including the gate forming area;
- forming a gate insulation layer over the semiconductor substrate including the recess;
- forming a first gate conductive layer over the gate insulation layer to fill in the recess;
- etching the first gate conductive layer to remove a portion of the first gate conductive layer that corresponds to an upper end portion of a side of the recess;
- forming an insulation layer at the upper end portion of the side wall of the recess from which the portion of the first gate conductive layer is removed;
- forming a second gate conductive layer over the insulation layer and the first gate conductive layer;
- forming sequentially a third gate conductive layer and a hard mask layer over the second gate conductive layer;
- and
- etching the hard mask layer, the third gate conductive layer, the second gate conductive layer, the first gate conductive layer, the insulation layer, and the gate insulation layer to form a gate.
A method for manufacturing a semiconductor device, the method comprising:
- forming a semiconductor substrate with an active region comprising a gate forming area, a source forming area and a drain forming area;
- forming a recess in the gate forming area;
- forming a gate over the gate forming area formed with the recess, wherein the gate comprises an insulation layer formed at an upper end portion of a side wall of the recess, the upper end portion of a side wall of the recess being in contact with the source forming area;
- and
- forming a source area and a drain area in the active region on opposite sides of the gate.
Dependencies are inferred from the claim text.