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US 2008/0290392 A1Published application
Semiconductor device having n-channel type MOS transistor with gate electrode layer featuring small average polycrystalline silicon grain size
AssigneeNEC Electronics Corporation
InventorsMitsuhiro Togo, Takayuki Suzuki
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Abstract
In a semiconductor device including a semiconductor substrate, and an n-channel type MOS transistor produced in the semiconductor substrate, the n-channel type MOS transistor includes a gate insulating layer formed on the semiconductor substrate and having a thickness of at most 1.6 nm, and a gate electrode layer on the gate insulating layer, and the gate electrode layer is composed of polycrystalline silicon which has an average grain size falling within a range between 10 nm and 150 nm in the vicinity of the gate insulating layer.
Claims11
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a metal oxide semiconductor (MOS) transistor produced in said semiconductor substrate,
- wherein said MOS transistor includes a gate insulating layer formed on said semiconductor substrate and having a thickness of at most 1.6 nm, and a gate electrode layer on said gate insulating layer, and
- wherein said gate electrode layer is composed of polycrystalline silicon which has an average grain size falling within a range between 10 nm and 150 nm in the vicinity of said gate insulating layer.
2 more elements
Dependencies are inferred from the claim text.