Back to results
US 2008/0290384 A1Published application
Microelectronic Device Provided with Transistors Coated with a Piezoelectric Layer
AssigneeCommissariat a l'Energie Atomique
InventorsJerome Lolivier, Maud Vinet, Thierry Poiroux
Life of this patent
Estimating the term…
Abstract
An improved microelectronic device, and method for making such a microelectronic device. The device includes one or plural transistors and piezoelectric mechanisms, with an arrangement capable of applying a variable mechanical strain on transistor channels.
Claims20
1-24. (canceled)
A microelectronic device comprising:
- a substrate;
- at least one first transistor including at least one source region, at least one drain region, at least one structure forming at least one channel connecting the source region and the drain region, and at least one gate;
- piezoelectric means, supported on at least one portion of the gate and above at least one portion of at least one of said source and/or drain regions, the piezoelectric means for inducing a mechanical strain or plural different types of mechanical strains on the channel of the transistor;
- at least one first contact pad in contact with the source region and configured to be connected to means for applying bias to the source region;
- and
- at least one second contact pad in contact with the gate and configured to be connected to means for applying bias to the gate, the first contact pad and the second contact pad being in contact with the piezoelectric means.
3 more elements
A microelectronic device comprising:
- a substrate;
- at least one first transistor including at least one source region, at least one drain region, at least one semiconducting structure forming at least one channel, connecting the source region and the drain region, and at least one gate;
- and
- piezoelectric means located under the gate, between the gate and the substrate, the piezoelectric means for inducing a mechanical strain or plural different types of mechanical strains on the channel of the transistor, the piezoelectric means comprising at least one piezoelectric material-based layer in contact with the gate and the structure of the channel.
1 more element
A microelectronic device comprising:
- a substrate,
- at least one first transistor including at least one source region, at least one drain region, at least one semiconducting structure forming at least one channel, connecting the source region and the drain region, and at least one gate;
- piezoelectric means located under the gate, between the gate and the substrate, the piezoelectric means for inducing a mechanical strain or plural different types of mechanical strains on the channel of the transistor, the piezoelectric means comprising at least one piezoelectric and semiconducting material-based layer forming part of the structure of the channel.
A method for making a microelectronic device comprising:
- a) forming at least one first transistor on a substrate, including at least one source region, at least one drain region and at least one structure forming a channel, connecting the source region and the drain region, and at least one gate supported on the channel;
- b) forming one piezoelectric layer above at least one portion of said first source and/or drain regions and supported on at least one portion of the gate of the first transistor;
- and
- c) forming at least one first conducting pad in contact with the source region and the piezoelectric layer, and at least one second conducting pad in contact with the gate and with the piezoelectric layer.
1 more element
A method for making a microelectronic device comprising:
- a) forming of at least one first transistor on a substrate, including at least one source region and at least one drain region, and at least one semiconducting structure, connecting the source region and the drain region;
- b) forming at least one piezoelectric layer on the semi-conducting structure;
- and
- c) forming at least one gate above and facing the piezoelectric layer.
1 more element
A method for making a microelectronic device comprising:
- a) forming at least one first transistor on a substrate, including at least one source region and at least one drain region, and at least one semiconducting structure, connecting the source region and the drain region;
- b) forming at least one piezoelectric layer above and facing the semiconducting structure, in which the piezoelectric layer is formed on the semiconducting structure and is made of at least a semi-conducting material, the semi-conducting structure and the piezoelectric layer forming a channel for the transistor;
- c) forming at least one gate above and facing the piezoelectric layer.
Dependencies are inferred from the claim text.