Solid-state imaging device and camera

A solid-state imaging device comprising:

• a substrate configured to have a first substrate surface irradiated with light and a second substrate surface on which an element is formed;
• a light-receiving part configured to be formed in the substrate and include a first-conductivity-type conductive layer, the light-receiving part receiving light through the first substrate surface and having a photoelectric conversion function for received light and a charge accumulation function;
• a second-conductivity-type isolation layer configured to be formed on a side of the first-conductivity-type conductive layer of the light-receiving part;
• a detection transistor configured to include a second-conductivity-type electrode layer formed in the first-conductivity-type conductive layer near the second substrate surface, the detection transistor detecting an accumulated charge in the light-receiving part and having a threshold modulation function;
• and
• a reset transistor configured to include a first-conductivity-type electrode layer formed in the second-conductivity-type isolation layer that is adjacent to a formation area of the detection transistor along a direction parallel to a substrate surface, the reset transistor further including the second-conductivity-type isolation layer between the first-conductivity-type electrode layer and the second-conductivity-type electrode layer of the detection transistor adjacent to the second-conductivity-type isolation layer, the reset transistor further including the first-conductivity-type conductive layer of the light-receiving part, wherein
• a first source region of a second conductivity type is formed in the first-conductivity-type conductive layer near the second substrate surface in each of cells isolated from each other, and a first drain region of the second conductivity type is formed to surround the first source region,
• a side of the first drain region remoter from a source side overlaps with a partial portion of the second-conductivity-type isolation layer along a direction parallel to the substrate surface,
• a first gate region surrounded by the first source region and the first drain region is formed,
• a second drain region as the first-conductivity-type electrode layer is formed in the second-conductivity-type isolation layer at a predetermined distance from an end of the first drain region remoter from the source side, and a second-conductivity-type region surrounded by the first drain region and the second drain region serves as a second gate region,
• an insulating film is selectively formed on the second substrate surface of the substrate in which the first source region, the first drain region, the first gate region, the second drain region, and the second gate region are formed, and
• the detection transistor based on the first source region, the first gate region, and the first drain region and the reset transistor based on the second gate region, the second drain region, and the first-conductive-type conductive layer in a floating state as a source are formed across the second substrate surface.

A solid-state imaging device comprising:

• a substrate configured to have a first substrate surface irradiated with light and a second substrate surface on which an element is formed;
• a light-receiving part configured to be formed in the substrate and include a first-conductivity-type conductive layer, the light-receiving part receiving light through the first substrate surface and having a photoelectric conversion function for received light and a charge accumulation function;
• a second-conductivity-type isolation layer configured to be formed on a side of the first-conductivity-type conductive layer of the light-receiving part;
• and
• an element area part configured to be formed in the light-receiving part near the second substrate surface and process an accumulated charge, wherein
• the first-conductivity-type conductive layer of the light-receiving part is divided by a second-conductivity-type layer into two regions along a normal direction of the substrate, to thereby form a first region and a second region,
• a first-conductivity-type electrode layer is formed in the second-conductivity-type isolation layer that is adjacent to the first region along a direction parallel to a substrate surface,
• a transparent electrode to which bias voltage for developing a pinning function is applied is formed on a light-incident side of the first substrate surface, and
• a memory transistor that includes the first-conductivity-type electrode layer, the second-conductivity-type isolation layer between the first region of the light-receiving part and the first-conductivity-type electrode layer, and the first region of the light-receiving part is formed.

A camera comprising:

• a solid-state imaging device configured to receive light through a first substrate surface of a substrate;
• an optical system configured to guide incident light to the first substrate surface of the solid-state imaging device;
• and
• a signal processing circuit configured to process an output signal from the solid-state imaging device, wherein the solid-state imaging device includes
• a light-receiving part that is formed in the substrate and includes a first-conductivity-type conductive layer, the light-receiving part receiving light through the first substrate surface and having a photoelectric conversion function for received light and a charge accumulation function,
• a second-conductivity-type isolation layer that is formed on a side of the first-conductivity-type conductive layer of the light-receiving part,
• a detection transistor that includes a second-conductivity-type electrode layer formed in the first-conductivity-type conductive layer near a second substrate surface of the substrate, the detection transistor detecting an accumulated charge in the light-receiving part and having a threshold modulation function, and
• a reset transistor that includes a first-conductivity-type electrode layer formed in the second-conductivity-type isolation layer that is adjacent to a formation area of the detection transistor along a direction parallel to a substrate surface, the reset transistor further including the second-conductivity-type isolation layer between the first-conductivity-type electrode layer and the second-conductivity-type electrode layer of the detection transistor adjacent to the second-conductivity-type isolation layer, the reset transistor further including the first-conductivity-type conductive layer of the light-receiving part.

A camera comprising:

• a solid-state imaging device configured to receive light through a first substrate surface of a substrate;
• an optical system configured to guide incident light to the first substrate surface of the solid-state imaging device;
• and
• a signal processing circuit configured to process an output signal from the solid-state imaging device, wherein the solid-state imaging device includes
• a light-receiving part that is formed in the substrate and includes a first-conductivity-type conductive layer, the light-receiving part receiving light through the first substrate surface and having a photoelectric conversion function for received light and a charge accumulation function,
• a second-conductivity-type isolation layer that is formed on a side of the first-conductivity-type conductive layer of the light-receiving part,
• a detection transistor that includes a second-conductivity-type electrode layer formed in the first-conductivity-type conductive layer near a second substrate surface of the substrate, the detection transistor detecting an accumulated charge in the light-receiving part and having a threshold modulation function, and
• a reset transistor that includes a first-conductivity-type electrode layer formed in the second-conductivity-type isolation layer that is adjacent to a formation area of the detection transistor along a direction parallel to a substrate surface, the reset transistor further including the second-conductivity-type isolation layer between the first-conductivity-type electrode layer and the second-conductivity-type electrode layer of the detection transistor adjacent to the second-conductivity-type isolation layer, the reset transistor further including the first-conductivity-type conductive layer of the light-receiving part,
• a first source region of a second conductivity type is formed in the first-conductivity-type conductive layer near the second substrate surface in each of cells isolated from each other, and a first drain region of the second conductivity type is formed to surround the first source region,
• a side of the first drain region remoter from a source side overlaps with a partial portion of the second-conductivity-type isolation layer along a direction parallel to the substrate surface,
• a first gate region surrounded by the first source region and the first drain region is formed,
• a second drain region as the first-conductivity-type electrode layer is formed in the second-conductivity-type isolation layer at a predetermined distance from an end of the first drain region remoter from the source side, and a second-conductivity-type region surrounded by the first drain region and the second drain region serves as a second gate region,
• an insulating film is selectively formed on the second substrate surface of the substrate in which the first source region, the first drain region, the first gate region, the second drain region, and the second gate region are formed, and
• the detection transistor based on the first source region, the first gate region, and the first drain region and the reset transistor based on the second gate region, the second drain region, and the first-conductive-type conductive layer in a floating state as a source are formed across the second substrate surface.