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US 2008/0290372 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorKozo MAKIYAMA
Life of this patent
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Abstract
A semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, and a protective insulating film composed of silicon nitride, which is formed over a surface of the compound semiconductor layer and whose film density in an intermediate portion is lower than that in a lower portion.
Claims20
A semiconductor device, comprising:
- a substrate;
- a compound semiconductor layer formed over the substrate;
- and
- a protective insulating film composed of silicon nitride, which is formed over a surface of the compound semiconductor layer and whose film density in an intermediate portion is lower than that in a lower portion.
1 more element
A method of manufacturing a semiconductor device, comprising:
- forming a compound semiconductor layer over a substrate;
- forming a first layer silicon nitride film constituting a protective insulating film over a surface of the compound semiconductor layer by a plasma CVD method;
- and
- forming a second layer silicon nitride film constituting the protective insulating film over the first layer silicon nitride film by a plasma CVD method under a film-forming condition where the second layer silicon nitride film is formed with a lower film density than the first silicon nitride film.
1 more element
A method of manufacturing a semiconductor device, comprising:
- forming a compound semiconductor layer on a substrate;
- and
- forming a protective insulating film composed of silicon nitride on a surface of the compound semiconductor layer by a plasma CVD method under a film-forming condition where the film density is continuously lowered from the bottom to the top.
Dependencies are inferred from the claim text.