Semiconductor light-emitting device and a method to produce the same
AssigneeSumitomo Electric Industries, Ltd.
InventorKenji Hiratsuka
Life of this patent
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Abstract
A new structure of a semiconductor optical device and a method to produce the device are disclosed. One embodiment of the optical device of the invention provides a blocking region including, from the side close to the mesa, a p-type first layer and a p-type second layer. The first layer is co-doped with an n-type impurity and a p-type impurity. The doping concentration of the p-type impurity in the first layer is smaller than that in the second layer, so, the first layer performs a function of a buffer layer for the Zn diffusion from the second layer to the active layer in the mesa structure.
Claims15
A method for manufacturing a semiconductor optical device, comprising steps of:
- forming a mesa on a semiconductor substrate, said mesa including a lower cladding layer, an active layer, and an upper cladding layer;
- forming a blocking region so as to bury said mesa by a sequential growth including,
- growing a first semiconductor layer made of InP doped with n-type impurities at least on a side wall of said active layer in said mesa,
- growing a second semiconductor layer on said first semiconductor layer, said second semiconductor layer being made of p-type InP doped with zinc (Zn), and
- growing a third semiconductor layer made of n-Type InP doped with n-type impurities;
- and
- converting said first semiconductor layer into a p-type semiconductor layer by heat treatment.
A semiconductor optical device, comprising:
- a mesa arranged on a semiconductor substrate, said mesa including a lower cladding layer, an active layer and an upper cladding layer in this order from said semiconductor substrate;
- a blocking region arranged on said semiconductor substrate so as to bury said mesa, said blocking region including,
- a first semiconductor layer made of p-type InP co-doped with n-type impurities and zinc (Zn) atoms, said first semiconductor layer covering at least a side wall of said active layer,
- a second semiconductor layer made of p-type InP doped with Zn, and
- a third semiconductor layer made of n-type InP.
A method for manufacturing a semiconductor optical device, comprising steps of:
- forming a mesa on a semiconductor substrate, said mesa including a lower cladding layer, an active layer, and an upper cladding layer;
- forming a blocking region so as to bury said mesa by a sequential growth including,
- growing a first additional semiconductor layer made of InP doped with zinc (Zn),
- growing a first semiconductor layer made of InP doped with n-type impurities at least on a side wall of said active layer in said mesa,
- growing a second semiconductor layer on said first semiconductor layer, said second semiconductor layer being made of p-type InP doped with zinc (Zn), and
- growing a third semiconductor layer made of n-Type InP doped with n-type impurities;
- and
- converting said first semiconductor layer into a p-type semiconductor layer by heat treatment.
Dependencies are inferred from the claim text.