Back to results
US 2008/0290356 A1Published application
Reflective Layered System Comprising a Plurality of Layers that are to be Applied to a III/V Compound Semiconductor Material
OwnerGertrud Krauter, Andreas Plossl +2inventors
InventorsGertrud Krauter, Andreas Plossl, Ralph Wirth, Heribert Zull
Life of this patent
Estimating the term…
Abstract
The invention describes a method for producing a reflective layer system and a reflective layer system for application to a III/V compound semiconductor material, wherein a first layer, containing phosphosilicate glass, is applied directly to the semiconductor substrate Disposed thereon is a second layer, containing silicon nitride. A metallic layer is then applied thereto.
Claims20
A reflective layer system applied to a III/V compound semiconductor material, the reflective layer system comprising:
- a dielectric layer containing phosphosilicate glass and disposed on said III/V compound semiconductor material, and
- a layer containing a metal and disposed on said dielectric layer.
Dependencies are inferred from the claim text.