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US 2008/0290348 A1Published application
Semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorToru Yoshie
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Abstract
In the present invention, a vertical MOSFET is formed by growing epitaxial Si on a SiC substrate and forming a Si oxide layer on the Si. In particular, a semiconductor device according to the present invention includes a SiC substrate, and an epitaxial Si layer formed on a surface of the SiC substrate, and a Si oxide layer formed on the epitaxial Si layer, and a gate electrode formed on the Si oxide layer, and a source region formed in the epitaxial Si layer, and a drain electrode connected to the SiC substrate.
Claims2
A semiconductor device comprising:
- a SiC substrate;
- an epitaxial silicon layer formed on a surface of the SiC substrate;
- a silicon oxide layer formed on the epitaxial silicon layer;
- a gate electrode formed on the silicon oxide layer;
- a source region formed in the epitaxial silicon layer;
- and
- a drain electrode connected to the SiC substrate.
4 more elements
Dependencies are inferred from the claim text.