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US 2008/0290347 A1Published application
Gallium Nitride Semiconductor and Method of Manufacturing the Same
OwnerYong Jin Kim, Dong Kun Leeinventors
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Abstract
The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.
Claims7
A gallium nitride (GaN) semiconductor, comprising:
- a wafer having a defect layer formed in a predetermined region in the wafer;
- and
- a GaN thin film formed on the wafer.
A gallium nitride (GaN) semiconductor, comprising:
- a silicon wafer having a defect layer formed in predetermined region in the wafer;
- and
- a GaN thin film formed on the wafer;
- wherein the defect layer is formed by blasting the wafer with a high-pressure slurry containing SiO2 particles.
1 more element
Dependencies are inferred from the claim text.