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US 2008/0290346 A1Published application
Light emitting device and manufacturing method thereof
AssigneeLG Innotek Co., Ltd.
InventorSang Kyun SHIM
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Abstract
Provided are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer with a lower surface being uneven in height, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
Claims20
A light emitting device comprising:
- a first conductive semiconductor layer with a lower surface being uneven in height;
- an active layer on the first conductive semiconductor layer;
- and
- a second conductive semiconductor layer on the active layer.
1 more element
A light emitting device comprising:
- a substrate;
- a first buffer layer on portions of the substrate;
- a first undoped GaN layer on the first buffer layer;
- a first conductive semiconductor layer over the substrate;
- an active layer on the first conductive semiconductor layer;
- and
- a second conductive semiconductor layer on the active layer.
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A method for manufacturing a light emitting device, the method comprising:
- forming a first buffer layer and a first un-doped GaN layer on a substrate;
- exposing a portion of the substrate through etching the substrate with the first buffer layer and the first un-doped GaN layer formed thereon;
- and
- forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer over the substrate.
1 more element
Dependencies are inferred from the claim text.