Image Display Device And Method For Manufacturing The Same
OwnerMitsuharu TAI, Mutsuko HATANO +3inventors
InventorsMitsuharu TAI, Mutsuko HATANO, Takeshi SATO, Seongkee PARK, Kiyoshi OUCHI
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Abstract
An image display device manufactured by using a polycrystalline semiconductor film. The polycrystalline semiconductor film is composed of crystal grains with a region free from crystal grain boundaries of at least 2 μm in width and at least 3 μm in length, small crystal grain boundary groups each composed of three or more crystal grain boundaries arranged substantially in parallel to each other and with an interval of not greater than 100 μm are included in a part of the region, and the small crystal grain boundary groups are partially eliminated.
Claims22
An image display device manufactured by using a polycrystalline semiconductor film, wherein the polycrystalline semiconductor film is composed of crystal grains with a region free from crystal grain boundaries of at least 2 μm in width and at least 3 μm in length, small crystal grain boundary groups each composed of at least three crystal grain boundaries arranged substantially in parallel to each other and with an interval of not greater than 100 μm are included in a part of the region, and the small crystal grain boundary groups are partially eliminated.
An image display device manufactured by using a polycrystalline semiconductor film, wherein the polycrystalline semiconductor film is composed of crystal grains with a region free from crystal grain boundaries of at least 0.2 μm in width and at least 2 μm in length, and in most of points where three crystal grain boundaries cross one another, three angles formed between the adjacent crystal grain boundaries are not smaller than 90°.
An image display device manufactured by using a polycrystalline semiconductor film, wherein the polycrystalline semiconductor film is composed of crystal grains with a region free from crystal grain boundaries of at least 2 μm in width and at least 3 μm in length, and a plurality of protrusions are disposed on the surface of the polycrystalline semiconductor film.
An image display device manufactured by using a polycrystalline semiconductor film, wherein the polycrystalline semiconductor film is composed of crystal grains with a region free from crystal grain boundaries of at least 0.2 μm in width and at least 3 μm in length, and each boundary connecting the points where three crystal grain boundaries cross one another has windings.
An image display device, comprising a pixel circuit of an image display portion, a drive circuit for driving the pixel circuit, and an integrated circuit group or processing and converting an external input signal to a signal needed for image display and for transferring the signal to the drive circuit, and the pixel circuit, the drive circuit and the integrated circuit group are disposed on the same insulating substrate wherein:
- each of the circuits is composed of a device including a plurality of thin film transistors having a semiconductor film as an active layer;
- and
- a part of the thin-film transistor active layer to constitute the drive circuit and the integrated circuit group grows crystal grains by scanning of a first energy beam in a direction along the scanning and is turned to polycrystalline, a first crystal grain is composed of a polycrystalline semiconductor film by decreasing defects within the crystal grain by a second high-speed heat treatment, and an other part of the thin-film transistor active layer is composed of a polycrystalline semiconductor film turned to polycrystalline by the second high-speed heat treatment.
Dependencies are inferred from the claim text.