Organic light-emitting display device
AssigneeSamsung Mobile Display Co., Ltd.
InventorsHun-jung Lee, Nam-choul Yang, Jae-kyeong Jeong, Hyun-soo Shin, Jin-seong Park, Jong-han Jeong, Yeon-gon Mo
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Abstract
An organic light-emitting display device. The organic light-emitting display device according to an embodiment of the present invention utilizes an N-type driving transistor, and therefore it has a drain electrode of a driving transistor electrically connected to a cathode electrode of an organic light-emitting diode, wherein the organic light-emitting display device includes a thin metal film between the cathode electrode and the organic light-emitting layer.
Claims20
An organic light-emitting display device, comprising:
- a substrate;
- a driving thin film transistor array on the substrate and comprising a semiconductor layer composed of an N-type semiconductor compound, a source electrode connected to a first region of the semiconductor layer, and a drain connected to a second region of the semiconductor layer;
- at least one insulator on the thin film transistor array;
- a cathode electrode connected to the drain electrode of the driving thin film transistor array;
- a thin metal film on the cathode electrode and composed of a material having a lower work function than the cathode electrode;
- an organic light-emitting layer on the thin metal film, the thin metal film being between the organic light-emitting layer and the cathode electrode;
- and
- an anode electrode on the organic light-emitting layer.
A pixel circuit of an organic light-emitting display device comprising:
- an organic light-emitting diode comprising:
- a cathode electrode, an anode electrode, an organic light-emitting layer between the cathode electrode and the anode electrode, and a thin metal film composed of a material having a lower work function than the cathode electrode, the thin metal film being between the organic light-emitting layer and the cathode electrode;
- and
- a driving thin film transistor comprising a semiconductor layer composed of an N-type semiconductor compound, a source electrode connected to a first region of the semiconductor layer, and a drain connected to a second region of the semiconductor layer, the drain electrode being connected to the cathode electrode.
Dependencies are inferred from the claim text.