Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors
AssigneeQimonda AG
InventorsMarcus Halik, Hagen Klauk, Ute Zschieschang, Guenter Schmid, Franz Effenberger
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Abstract
An organic field effect transistor, having a substrate, a source electrode, a drain electrode and a gate electrode and an organic semiconductor material is disclosed. Arranged between the gate electrode and the organic semiconductor material is a dielectric layer (gate dielectric) obtained from a self-assembled monolayer of an organic compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, the anchor group, the linker group, the head group, and the aliphatic orientating group being combined with one another in the order stated.
Claims31
1-29. (canceled)
An organic field effect transistor comprising;
- a substrate;
- a source electrode;
- a drain electrode;
- a gate electrode;
- and
- an organic semiconductor material, there being arranged between the gate electrode and the organic semiconductor material a dielectric layer (gate dielectric) containing a self-assembled monolayer of an organic compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, the anchor group, the linker group, the head group, and the aliphatic orientating group being combined with one another in the order stated.
A method for producing an organic field effect transistor, comprising:
- providing a substrate;
- depositing a gate electrode;
- contacting the gate electrode with a compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, in order to obtain a monolayer of the organic compound that is self-assembled on the gate electrode;
- depositing an organic semiconductor material;
- and
- depositing and if necessary patterning a source electrode and a drain electrode.
A method for producing an organic field effect transistor, comprising:
- providing a substrate;
- depositing a gate electrode;
- contacting the gate electrode with a compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, in order to obtain a monolayer of the organic compound that is self-assembled on the gate electrode;
- depositing and if necessary patterning a source electrode and a drain electrode;
- and
- depositing an organic semiconductor material.
An organic field effect transistor comprising;
- a substrate;
- a source electrode;
- a drain electrode;
- a gate electrode;
- and
- means for providing an organic semiconductor material, there being arranged between the gate electrode and the organic semiconductor material means a dielectric layer (gate dielectric) containing a self-assembled monolayer of an organic compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, the anchor group, the linker group, the head group, and the aliphatic orientating group being combined with one another in the order stated.
Dependencies are inferred from the claim text.