Phase change memory device and method for fabricating the same
AssigneesIndustrial Technology Research Institute, Powerchip Semiconductor Corp., Nanya Technology Corporation, ProMOS Technologies Inc., Winbond Electronics Corp.
InventorsYung-Fa Lin, Te-Chun Wang
Life of this patent
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Abstract
A phase change memory device comprising a substrate. A plurality of bottom electrodes isolated from each other is on the substrate. An insulating layer crosses a portion of the surfaces of any two of the adjacent bottom electrodes. A pair of phase change material spacers is on a pair of sidewalls of the insulating layer, wherein the pair of the phase change material spacers is on any two of the adjacent bottom electrodes, respectively. A top electrode is on the insulating layer and covers the phase change material spacers.
Claims17
A phase change memory device, comprising:
- a substrate;
- a plurality of bottom electrodes isolated from each other on the substrate;
- an insulating layer crossing a portion of the surfaces of any two of the adjacent bottom electrodes;
- a pair of phase change material spacers on a pair of sidewalls of the insulating layer, wherein the pair of phase change material spacers are on any two of the adjacent bottom electrodes respectively;
- and
- a top electrode on the insulating layer, covering the pair of phase change material spacers.
A method of fabricating a phase change memory device, comprising:
- providing a substrate having a plurality of bottom electrodes on the substrate, wherein the plurality of bottom electrodes is isolated from each other by a first insulating layer;
- forming a phase change material structure on the first insulating layer, crossing a portion of the surfaces of any two of the adjacent bottom electrodes, wherein the phase change material structure comprises a pair of phase change material spacers electrically connected to any two of the adjacent bottom electrodes respectively;
- and
- forming a top electrode on the insulating layer, electrically connecting the pair of phase change material spacers.
Dependencies are inferred from the claim text.