Methods and apparatus for depositing a group iii-v film using a hydride vapor phase epitaxy process

An apparatus for a hydride vapor phase epitaxy process, comprising:

• a chamber;
• a substrate support assembly adapted to receive a substrate disposed thereon;
• an elongated body having a trough defined between a first and second walls disposed in the chamber proximate the substrate support assembly;
• an outer inlet port formed in the elongated body;
• a gas dispense assembly attached to the elongated body;
• and
• an inlet port and an outlet port each formed above the first and the second wall of the trough.

A method for depositing a Group III nitride by a hydride vapor phase epitaxy process, comprising:

• providing Group III metal liquid precursor in a container disposed in a chamber;
• flowing a halogen containing gas across the container to form a Group III metal halide vapor to a reacting zone in the chamber;
• and
• mixing the Group III metal halide vapor with a Group V gas supplied in the chamber in the reacting zone.