Loading patent…
AssigneeMitsubishi Chemical Corporation
InventorsTakeshi Tahara, Yoshinori Seki, Shigeru Terada, Sachie Takeuchi, Youji Arita, Kouhei Kubota
Estimating the term…
A process for producing a Group 13 metal nitride crystal, comprising performing the growth of a Group 13 metal nitride crystal in a solution or melt comprising an ionic solvent having dissolved therein a composite nitride containing a metal element belonging to Group 13 of the Periodic Table and a metal element other than Group 13 of the Periodic Table. According to this production process, a good-quality Group 13 metal nitride crystal can be produced under low or atmospheric pressure by an industrially inexpensive method.
A process for producing a Group 13 metal nitride crystal, comprising dissolving a composite nitride containing a metal element belonging to Group 13 of the Periodic Table and a metal element other than Group 13 of the Periodic Table in an ionic solvent to prepare a solution or a melt, and performing the growth of a Group 13 metal nitride crystal in said solution or melt.
A process for producing a Group 13 metal nitride crystal, comprising performing the growth of a Group 13 metal nitride crystal in a solution or melt having a nitrogen concentration XN represented by the following formula (1):
A solution or melt comprising an ionic solvent having dissolved therein a composite nitride containing a metal element belonging to Group 13 of the Periodic Table and a metal element other than Group 13 of the Periodic Table.
Dependencies are inferred from the claim text.