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US 2008/0286984 A1Published application
Silicon-rich low-hydrogen content silicon nitride film
OwnerJason B. Taylor, Chiliang Cheninventors
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Abstract
In one embodiment, a method for forming a silicon nitride film is provided. The method includes providing a plasma-enhanced chemical vapor deposition (PECVD) reactor with a semiconductor substrate therein; flowing a gas mixture consisting of silane and nitrogen into the PECVD reactor; and forming a plasma in the PECVD reactor, whereby the silicon nitride film is deposited on the semiconductor substrate.
Claims20
A method, comprising:
- providing a plasma-enhanced chemical vapor deposition (PECVD) reactor with a semiconductor substrate therein;
- flowing a gas mixture consisting of silane and nitrogen into the PECVD reactor;
- and
- forming a plasma in the PECVD reactor, whereby a silicon nitride film is deposited on the semiconductor substrate.
1 more element
A method, comprising:
- providing a plasma-enhanced chemical vapor deposition (PECVD) reactor with a semiconductor substrate therein;
- flowing a gas mixture consisting of silane and nitrogen into the PECVD reactor;
- and
- forming a plasma in the PECVD reactor, whereby a silicon nitride film is deposited on the semiconductor substrate, the silicon nitride film having a stoichiometric composition of SixNyHz, wherein x>y>z.
1 more element
Dependencies are inferred from the claim text.