CMOS Gate Structures Fabricated by Selective Oxidation

A method of fabricating at least one sublithographic structure comprising the steps of:

• depositing a structure layer on a substrate;
• depositing a layer of a mandrel material over said structure layer;
• depositing a layer of a cap material over said layer of mandrel material;
• patterning said layer of mandrel material and said layer of cap material with the pattern of at least one sacrificial mandrel;
• etching said layer of mandrel material and said layer of cap material to form at least one sacrificial mandrel;
• converting at least one sub-lithographic edge region of said sacrificial mandrel to an etch-resistant sidewall;
• stripping said unconverted portions of said layer of mandrel material and said layer of cap material, leaving at said least one etch-resistant sidewall image;
• using said at least one etch-resistant sidewall image as a hardmask, etching said structure layer to form at least one sub-lithographic structure.