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US 2008/0286933 A1Published application
Integrated circuit inductor with integrated vias
AssigneeTexas Instruments Incorporated
InventorsRobert L. Pitts, Greg C. Baldwin
Life of this patent
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Abstract
Integrated circuit inductors (5) are formed by interconnecting various metal layers (10) in an integrated circuit with continuous vias (200). Using continuous vias (200) improves the Q factor over existing methods for high frequency applications. The contiguous length of the continuous vias should be greater than three percent of the length of the inductor (5).
Claims5
1-11. (canceled)
A method of forming an integrated circuit inductor, comprising:
- providing a semiconductor;
- forming a first metal layer of a first length above said semiconductor;
- forming a second metal layer of a second length above said first metal layer;
- forming a continuous via of a third length interconnecting said first metal layer and said second metal layer to form an integrated circuit inductor wherein said third length is greater than three percent of said first length.
1 more element
Dependencies are inferred from the claim text.