Method for in-situ repairing plasma damage and method for fabricating transistor device
AssigneeMacronix International Co., Ltd.
InventorsHsin-Fang Su, Shih-Chang Tsai, Chun-Hung Lee
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Abstract
A method for in-situ repairing plasma damage, suitable for a substrate, is provided. A component is formed on the substrate. The formation steps of the component include a main etching process containing plasma. The method involves performing a soft plasma etching process in the apparatus of the main etching process containing plasma to remove a portion of the substrate. The soft plasma etching process is less than 30% of the power used in the main etching process.
Claims20
A method for in-situ repairing plasma damage, suitable for a substrate, wherein a component is formed on the substrate, and the formation steps of the component include a main etching process containing plasma, the method comprising:
- performing a soft plasma etching process in a apparatus of the main etching process to remove a portion of the substrate, wherein the power used in the soft plasma etching process is less than 30% of the power used in the main etching process.
A method for fabricating transistor device, comprising:
- providing a substrate;
- forming a gate structure on the substrate;
- performing a deposition process and an etching process containing plasma to form a pair of spacers containing silicon dioxide or silicon nitride on the side wall of the gate structure;
- performing a soft plasma etching process in a apparatus of the etching process to remove a portion of the substrate, wherein the power used in the soft plasma etching process is less than 30% of the power used in the main etching process;
- and
- forming a source/drain region on the substrate.
Dependencies are inferred from the claim text.