Method for kinetically controlled etching of copper
AssigneeIBM Corporation (Yorktown)
InventorsDavid L. Rath, Emanuel I. Cooper
Life of this patent
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Abstract
An etching composition, particularly for kinetically controlled etching of copper and copper alloy surfaces; a process for etching copper and copper alloys, particularly for etching at high rates to provide uniform and smooth, isotropic surfaces; an etched copper or copper alloy surface obtained by the process; and a process for generating copper or copper alloy electrical interconnects or contact pads. The etching composition and etching processes provide a smooth, isotropic fast etch of copper and copper alloys for semiconductor fabrication and packaging.
Claims20
An etching composition comprising:
- (a) one or more bidentate or tridentate copper complexants selected from the group consisting of aminocarboxylic acids (amino acids), aminophosphonic acids, di-and tricarboxylic acids, di-and triphosphonic acids, carboxyphosphonic acids, and combinations thereof,
- (b) a compound containing one or more peroxy groups;
- (c) optionally one or more buffering compounds;
- (d) optionally a peroxide stabilizer;
- and
- (e) water.
Dependencies are inferred from the claim text.