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US 2008/0279014 A1Published application
Multi-phase wordline erasing for flash memory
AssigneeSpansion LLC
InventorsXuguang Wang, Yi He, Zhizheng Liu, Sung-Yong Chung, Darlene G. Hamilton, Ashot Melik-Martirosian, Gulzar Kathawala, Ming Sang Kwan, Mark Randolph, Timothy Thurgate
Life of this patent
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Abstract
Erasing wordlines at the same time can cause undesirable results because some wordlines are affected by electromagnetic waves of other wordlines. However, other wordlines are not affected because they are next to contacts. Therefore, it can be beneficial to erase wordlines in a multi-phase sequence that allows for erasing wordlines without an impact from other wordlines.
Claims20
A system, comprising:
- a storage component that includes a plurality of wordlines that store information;
- and
- an erasing component that erases information stored on the plurality of wordlines in a sequence of at least two phases.
A method, comprising:
- obtaining a multi-phase sequence for erasing wordlines;
- and
- implementing a multi-stage sequence wherein the multi-stage sequence includes an obtained multi-phase sequence for erasing wordlines.
A system, comprising:
- means for holding information in a plurality of bitlines and a plurality of wordlines;
- and
- means for expunging information held on the plurality of wordlines and the plurality of bitlines through a multi-stage progression.
Dependencies are inferred from the claim text.