Semiconductor chip and manufacturing method thereof
AssigneeSony Corporation
InventorsHiroshi Ozaki, Satoru Wakiyama
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Abstract
A semiconductor chip formed with a bump such that the bump corresponds to a pad electrode. The pad electrode is covered with a nickel layer. The bump has an indium layer and an intermediate metal compound layer disposed between the indium layer and the nickel layer, and the intermediate metal compound layer is formed by alloying the indium layer and a copper layer containing copper atoms of not less than 0.5 atomic percent and not more than 5 atomic percent with respect to the indium atoms in the indium layer.
Claims10
A semiconductor chip formed with a bump such that the bump corresponds to a pad electrode, wherein;
- the pad electrode is covered with a nickel layer;
- the bump has an indium layer and an intermediate metal compound layer disposed between the indium layer and the nickel layer;
- and
- the intermediate metal compound layer is formed by alloying the indium layer and a copper layer containing copper atoms of not less than 0.5 atomic percent and not more than 5 atomic percent with respect to the indium atoms in the indium layer.
A method of manufacturing a semiconductor chip in which a bump is formed correspondingly to a pad electrode, comprising:
- a nickel layer forming step of forming a nickel layer so as to cover the pad electrode;
- and
- a bump forming step of forming the bump correspondingly to the pad electrode covered with the nickel layer, wherein;
- the bump forming step includes:
- a copper layer forming step of forming a copper layer on the nickel layer;
- an indium layer forming step of forming an indium layer on the copper layer;
- and
- a heat treatment step of forming the bump by performing heat treatment such that the copper layer and the indium layer are alloyed to generate an intermediate metal compound layer, wherein;
- in the copper layer forming step, the copper layer is formed such that the ratio of copper atoms in the copper layer is not less than 0.5 atomic percent and not more than 5 atomic percent with respect to indium atoms in the indium layer formed in the indium layer forming step.
A semiconductor chip having a bump formed correspondingly to a pad electrode, wherein;
- the pad electrode is covered with a nickel layer;
- the bump has an indium layer and an intermediate metal compound layer disposed between the indium layer and the nickel layer;
- and
- the intermediate metal compound layer is an indium-nickel alloy layer having a thickness of 1 μm or above which is formed by alloying the indium layer and the nickel layer such that In7Ni3 is included.
A method of manufacturing a semiconductor chip in which a bump is formed correspondingly to a pad electrode, comprising:
- a nickel layer forming step of forming a nickel layer so as to cover the pad electrode;
- and
- a bump forming step of forming the bump correspondingly to the pad electrode covered with the nickel layer, wherein;
- the bump forming step includes
- an indium layer forming step of forming an indium layer on the nickel layer;
- and
- a heat treatment step of forming the bump by performing heat treatment such that the indium layer and the nickel layer are alloyed into an indium-nickel alloy layer including In7Ni3 having a thickness of 1 μm or above to generate an intermediate metal compound layer.
Dependencies are inferred from the claim text.