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US 2008/0277754 A1Published application
Image sensor and fabrication method thereof
OwnerMichael-Y Liuinventor
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Abstract
A method of fabricating an image sensor contains providing a semiconductor substrate with a plurality of pixels defined thereon, forming pixel electrodes on the pixels, and forming a barrier device filled between adjacent pixel electrodes, wherein the barrier device contains a high-k material. Then, a photoconductive layer and a transparent conductive layer are successively formed on the high-k material layer and the pixel electrodes.
Claims30
A method of fabricating an image sensor, comprising:
- providing a semiconductor substrate with a plurality of pixels defined thereon;
- forming a plurality of pixel electrodes on the semiconductor substrate in the pixels;
- forming a barrier device filled between any two of the adjacent pixel electrodes, the barrier device comprising a high-k (high dielectric constant) material;
- and
- successively forming a photo-conductive layer and a transparent conductive layer on the barrier device and the pixel electrodes.
2 more elements
An image sensor comprising:
- a semiconductor substrate;
- a plurality of pixels defined on the semiconductor substrate, each of the pixels comprising a pixel electrode;
- a photo-conductive layer and a transparent conductive layer disposed on the pixel electrodes in order;
- and
- a barrier device disposed between any two of the adjacent pixel electrodes, the barrier device comprising a high-k material.
2 more elements
A method of fabricating an image sensor, comprising:
- providing a semiconductor substrate with a plurality of pixels defined thereon;
- forming a plurality of pixel electrodes in the pixels on the semiconductor substrate;
- forming a first conductive type doped layer on the semiconductor substrate, covering the pixel electrodes;
- removing a portion of the first conductive type doped layer to form a recess between any two of the adjacent pixel electrodes;
- forming a barrier device filling in the recess, the barrier device comprising a high-k material;
- and
- successively forming an intrinsic layer, a second conductive type doped layer, and a transparent conductive layer on the semiconductor substrate.
4 more elements
Dependencies are inferred from the claim text.