1T MEMS scalable memory cell
OwnerMihai Adrian Ionescu, Nicolas Abeleinventors
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Abstract
This invention relates to the use of a gate dielectric placed under the mobile gate electrode of MOS transistor, without the need of a conductive floating gate. The invention exploits the electromechanical hysteretic behavior of the mobile gate when down contacting (pull-in) and up separating (pull-out) from the gate dielectric, based on the (non)equilibrium between electrical and elastic forces.
Claims8
Memory cell device composed of a suspended gate MOS transistor including a conductive suspended-gate movable above an air-gap, able to move without need of other actuation electrode than the suspended gate electrode, a gate dielectric layer and a semiconductor substrate.
Dependencies are inferred from the claim text.