Solid-state imaging device and camera having the same

A solid-state imaging device comprising,

• unit pixels arranged in rows and columns on a semiconductor substrate,
• wherein said unit pixels are formed on a common well on the semiconductor substrate,
• each of said unit pixels includes:
• two or more photoelectric conversion regions each for converting light into a signal charge;
• an amplifying transistor that amplifies the signal charge and a reset transistor that resets the signal charge, the signal charge being converted by each of said photoelectric conversion regions;
• a power voltage contact which is electrically connected to a drain region of said amplifying transistor and of said reset transistor and which supplies a power voltage to said amplifying transistor and said reset transistor;
• a first semiconductor region which has a conductivity type identical to a conductivity type of the common well;
• and
• a first contact electrically connected to said first semiconductor region, and
• wherein at least one of metal wiring layers formed close to and above the drain region and said first semiconductor region is arranged in an identical structure with respect to each of adjacent photoelectric conversion regions.