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US 2008/0277697 A1Published application
Semiconductor device for high frequency
AssigneeKabushiki Kaisha Toshiba
InventorMasaki KOBAYASHI
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Abstract
A semiconductor device for high frequency includes a channel region fabricated on a compound semiconductor substrate, a gate electrode fabricated on the channel region, a source electrode and a drain electrode alternately fabricated on the channel region by sandwiching the gate electrode, a bonding pad to be connected to an external circuit, and an air-bridge having one end connected to the source electrode or the drain electrode above and outside the channel region, and the other end connected to the bonding pad.
Claims8
A semiconductor device for high frequency comprising:
- a channel region fabricated on a compound semiconductor substrate;
- a gate electrode fabricated on the channel region;
- a source electrode and a drain electrode alternately fabricated on the channel region by sandwiching the gate electrode;
- a bonding pad to be connected to an external circuit;
- and
- an air-bridge having one end connected to the source electrode or the drain electrode above and outside the channel region, and the other end connected to the bonding pad.
3 more elements
Dependencies are inferred from the claim text.