Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsWataru Saito, Hidetoshi Fujimoto, Takao Noda, Yasunobu Saito, Tomohiro Nitta
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AssigneeKabushiki Kaisha Toshiba
InventorsWataru Saito, Hidetoshi Fujimoto, Takao Noda, Yasunobu Saito, Tomohiro Nitta
Estimating the term…
A semiconductor device includes: a first semiconductor layer made of an AlxGa1−xN (0≦x<1); a second semiconductor layer provided on the first semiconductor layer and made of an undoped or first conductivity type AlyGa1−yN (0<y≦1, x<y); an anode electrode and a cathode electrode which are connected to the second semiconductor layer; and a third semiconductor layer of second conductivity type provided between the anode electrode and the cathode electrode when viewed from a direction perpendicular to an upper surface of the second semiconductor layer. The third semiconductor layer is depleted when a predetermined magnitude or more of voltage is applied between the anode electrode and the cathode electrode. the anode electrode and the cathode electrode
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.