Carbon-containing semiconducting devices and methods of making thereof
AssigneeNitto Denko Corporation
InventorsAmane Mochizuki, Toshitaka Nakamura, Masakatsu Urairi, Guang Pan
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Abstract
Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.
Claims48
A method of manufacturing a semiconducting device, comprising:
- forming a first polymer layer over a substrate, wherein the first polymer layer comprises nitrogen and carbon;
- forming a second polymer layer over the substrate, wherein the second polymer layer comprises aromatic and aliphatic functional groups;
- pyrolyzing the first polymer layer under substantially nonoxidizing conditions selected to transform the first polymer layer into an n-type semiconducting layer;
- and
- pyrolyzing the second polymer layer under substantially nonoxidizing conditions selected to transform the second polymer layer into a p-type semiconducting layer.
A semiconducting device, comprising:
- a substrate;
- an n-type semiconducting layer positioned over the substrate, the n-type semiconducting layer comprising a pyrolyzed carbon- and nitrogen-containing polymer;
- and
- a p-type semiconducting layer positioned over the substrate, the p-type semiconducting layer comprising a pyrolyzed aromatic- and aliphatic-group-containing polymer.
An n-type semiconducting layer made by a process that comprises pyrolyzing a polymer layer, wherein the polymer layer comprises nitrogen and carbon.
A p-type semiconducting layer made by a process that comprises pyrolyzing a polymer layer, wherein the polymer layer comprises aromatic and aliphatic functional groups.
A semiconducting device, comprising:
- a substrate;
- an n-type semiconducting layer positioned over the substrate, the n-type semiconducting layer comprising a pyrolyzed carbon- and nitrogen-containing polymer;
- and
- a p-type semiconducting layer positioned over the substrate, the p-type semiconducting layer comprising p-type silicon.
A semiconducting device, comprising:
- a substrate;
- an n-type semiconducting layer positioned over the substrate, the n-type semiconducting layer comprising n-type silicon;
- and
- a p-type semiconducting layer positioned over the substrate, the p-type semiconducting layer comprising a pyrolyzed aromatic- and aliphatic-group-containing polymer.
A method of manufacturing a semiconducting device, comprising:
- forming a first polymer layer over a substrate, wherein the first polymer layer comprises (i) nitrogen and carbon or (ii) aromatic and aliphatic functional groups;
- forming a second polymer layer over the substrate, wherein the second polymer layer comprises (i) nitrogen and carbon or (ii) aromatic and aliphatic functional groups;
- pyrolyzing one of the first or second polymer layers under substantially nonoxidizing conditions sufficient to transform the first or second polymer layer into a p-type semiconducting layer;
- and
- pyrolyzing the other polymer layer under substantially nonoxidizing conditions sufficient to transform the other polymer layer into an n-type semiconducting layer.
A method of manufacturing a semiconducting device, comprising:
- forming a first polymer layer over a substrate, wherein the first polymer layer comprises (i) nitrogen and carbon or (ii) aromatic and aliphatic functional groups;
- forming a second polymer layer over the substrate, wherein the second polymer layer comprises (i) nitrogen and carbon or (ii) aromatic and aliphatic functional groups;
- pyrolyzing the first polymer layer under substantially nonoxidizing conditions;
- measuring to confirm that the first polymer layer is either is an n-type or p-type carrier;
- pyrolyzing the second polymer layer under substantially nonoxidizing conditions;
- and
- measuring to confirm that the second polymer layer is a carrier type that is different than the carrier type of the first polymer layer.
A semiconducting device, comprising:
- a substrate;
- an n-type semiconducting layer positioned over the substrate, wherein the n-type semiconducting layer comprises (i) a pyrolyzed carbon- and nitrogen-containing polymer or (ii) a pyrolyzed aromatic- and aliphatic-group-containing polymer;
- and
- a p-type semiconducting layer positioned over the substrate, wherein the p-type semiconducting layer comprises (i) a pyrolyzed carbon- and nitrogen-containing polymer or (ii) a pyrolyzed aromatic- and aliphatic-group-containing polymer.
Dependencies are inferred from the claim text.