Polishing condition control apparatus and polishing condition control method of CMP apparatus

Abstract

To eliminate the unevenness of the remaining film thickness of the wafers, and increase the polishing efficiency, reduce the running cost and enhance the yield. A CMP apparatus 1 is equipped with a polishing recipe preparing means 3 that prepares polishing conditions so that the polishing conditions such as polishing speed, polishing pressure, abrasive and the like for the wafers become optimal, a remaining film thickness forecasting means 4 that forecasts the remaining film thickness of the wafer to be polished under the polishing conditions after polishing, a remaining film thickness measuring apparatus 4 that measures the remaining film thickness of the wafer after the polishing, and a computer 6 that controls the polishing conditions on the basis of the measurement results of the remaining film thickness. Further, the computer 6 includes a calculating unit 11 that calculate the difference between the measured value of the remaining film thickness and the forecasted value thereof, and a polishing condition correcting/changing unit 13 that corrects/changes the polishing conditions so that the calculated difference becomes minimal, and thereby, the correction/change of the polishing conditions is carried out in real time.

Dependencies are inferred from the claim text.