Optoelectric High Frequency Modulator Integrated on Silicon
AssigneesUniversite Paris-Sud, Centre National de la Recherche Scientifique (CNRS)
InventorsSuzanne Laval, Delphine Marris, Eric Cassan, Daniel Pascal
Life of this patent
Estimating the term…
Abstract
An optoelectronic controller for regulating an optical signal. The controller includes a ridge or rib waveguide in an SOI-type substrate. The controller also includes an active zone formed by a plurality of thin layers of silicon. The layers are either N+ type doped or P+ type doped. The zone is defined between an N+ doped zone and a P+ doped zone which together form a PIN diode. The optoelectronic controller is all-silicon and operates by means of carrier desertion.
Claims11
An optoelectronic component for controlling an optical signal, said optoelectronic component comprising a ridge or rib waveguide in an SOI-type substrate, and an active zone characterized in that said active zone is formed by a plurality of very thin layers of silicon that are either N+ type doped or P+ typed doped (┌-doping), said zone being placed between an N+ doped zone and a P+ doped zone that form a PIN diode and that are disposed on either side of said active zone, making it possible to bias the structure, said optoelectronic component being further characterized in that it is all-silicon and in that it operates by carrier desertion.
Dependencies are inferred from the claim text.