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US 2008/0259690 A1Published application
Flash memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Hyuk Chae, Young-Ho Lim
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Abstract
A NAND flash memory device includes a high voltage switch and a bulk voltage supplying circuit. The high voltage switch is configured to transfer a word line voltage to selected word lines of selected memory cells. The bulk voltage supplying circuit is configured to provide a negative voltage to a bulk region of the high voltage switch in response to an operation mode.
Claims12
A NAND flash memory device comprising:
- a high voltage switch configured to transfer a word line voltage to selected word lines of selected memory cells;
- and
- a bulk voltage supplying circuit configured to provide a negative voltage to a bulk region of the high voltage switch in response to an operation mode.
A flash memory device comprising:
- a high voltage switch comprising a plurality of high voltage transistors, each high voltage transistor comprising a bulk region, the high voltage switch being configured to transfer a word line voltage to selected word lines corresponding to memory cells;
- a voltage generator configured to provide a negative voltage and a ground voltage;
- and
- a bulk voltage switch configured to provide one of the negative voltage and the ground voltage to the bulk region of at least high voltage transistor of the plurality of high voltage transistors in response to an operation mode.
1 more element
Dependencies are inferred from the claim text.