Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate;
• a circuit forming area and a memory area disposed in the semiconductor substrate;
• a plurality of memory cells formed in the memory area;
• a first well and a second well formed in the memory area;
• a first conductor film formed over the first well and the second well and extending in a first direction;
• a second conductor film formed over the first well;
• first semiconductor regions formed in the first region;
• and
• a second semiconductor region formed in the second region;
• wherein each of the memory cells includes a capacitance element, an element for reading data and a selection field effect transistor of the element for reading data,
• wherein the capacitance element includes the first conductor film and the second semiconductor region,
• wherein the element for reading data includes the first conductor film and the first semiconductor regions,
• wherein the selection field effect transistor of the element for reading data includes the second conductor film and the first regions,
• wherein, in a second direction perpendicular to the first direction, a length of the first conductor film of the capacitance element is larger than a length of the first conductor film of the element for reading data,
• wherein a word line of the memory cell is electrically connected to the second semiconductor region of the capacitance element,
• wherein, during a reading data operation, a first bit line of the memory cell is electrically connected to the first semiconductor region of the element for reading data via to the selection field effect transistor,
• wherein the memory cells which adjoin each other in the second direction are electrically connected by the word line, and
• wherein the memory cells which adjoin each other in the first direction are electrically connected by the first bit line.