Programming method of magnetic random access memory
AssigneeMacronix International Co., Ltd.
InventorChia-Hua Ho
Life of this patent
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Abstract
A programming method of a magnetic random access memory (MRAM) is provided. The magnetic random access memory includes a first magnetic pinned layer, a second magnetic pinned layer and a magnetic free layer. The first magnetic pinned layer is pinned at a first magnetic direction. The second magnetic pinned layer is pinned at a second magnetic direction. The magnetic free layer is magnetized into the first magnetic direction or the second magnetic direction. The programming method includes the following the steps. In the step (a), an additional magnetic field is applied onto the magnetic free layer. In the step (b), a first electron current is emitted through the magnetic free layer to magnetize the magnetic free layer into the first magnetic direction or the second magnetic direction.
Claims10
A programming method of a magnetic random access memory (MRAM), wherein the magnetic random access memory comprises a first magnetic pinned layer, a second magnetic pinned layer and a magnetic free layer, the first magnetic pinned layer is pinned at a first magnetic direction, the second magnetic pinned layer is pinned at a second magnetic direction, the magnetic free layer is magnetized into the first magnetic direction or the second magnetic direction, the programming method comprises:
- (a) applying an additional magnetic field onto the magnetic free layer;
- and
- (b) emitting a first electron current through the magnetic free layer to magnetize the magnetic free layer into the first magnetic direction or the second magnetic direction.
Dependencies are inferred from the claim text.