Integration type semiconductor device and method for manufacturing the same
AssigneeDenso Corporation
InventorHiroyasu Ito
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a plurality of power MOS cells on a semiconductor substrate; a plurality of lead wires connecting to a source and a drain of each power MOS cell through a contact hole; a plurality of collecting electrodes connecting in parallel with the lead wires through a via hole; an interlayer protection film on the collecting electrode; a thick film electrode connecting to the collecting electrode through the opening; and a terminal protection film having an opening for bonding connection. The openings are formed in the interlayer protection film such that a portion between the openings becomes a beam shape
Claims21
1-79. (canceled)
A semiconductor device having a construction comprising:
- a pad electrode disposed on a semiconductor substrate, on which an integrated circuit is formed;
- a protection film formed on a surface of the semiconductor substrate;
- a plurality of openings formed in the protection film disposed on the pad electrode so as to provide a beam between the openings;
- a thick pad electrode connecting to the pad electrode through a first barrier layer and made of a material having mechanical strength higher than a material of the pad electrode;
- an aluminum film or an aluminum alloy film covering a top and whole side surfaces of the thick pad electrode through a second barrier layer;
- and
- a terminal protection resin film having an opening disposed on a region for bonding connection, and covering the surface of the semiconductor substrate.
A semiconductor device having a construction comprising:
- a pad electrode disposed on a semiconductor substrate, on which an integrated circuit is formed;
- a protection film formed on a surface of the semiconductor substrate;
- a plurality of openings formed in the protection film disposed on the pad electrode so as to provide a beam between the openings;
- a thick pad electrode connecting to the pad electrode through a first barrier layer and made of a material having mechanical strength higher than a material of the pad electrode;
- an aluminum film or an aluminum alloy film covering a top and whole side surfaces of the thick pad electrode through a second barrier layer;
- and
- a terminal protection resin film having an opening disposed on a region for bonding connection, and covering the surface of the semiconductor substrate.
99-138. (canceled)
Dependencies are inferred from the claim text.