Semiconductor Device and Method for Fabricating the Same

A method for fabricating semiconductor devices, comprising the steps of:

• providing a wafer comprising a plurality of chips, each of the wafer and the chips having an active surface and an opposing non-active surface, and the active surface of each of the chips being formed with a plurality of bond pads thereon, and after each of the chips is determined to be a good die by a chip probing (CP) process, forming a first metal layer on any adjacent two of the chips to electrically connect the bond pads of the adjacent chips to each other;
• performing a singulation process on the wafer to separate the chips, and mounting the chips on a surface of a carrier having a plurality of conductive traces disposed on the surface in a manner that gaps are formed between the adjacent chips, with a portion of the conductive traces being exposed from the gaps;
• forming a dielectric layer in the gaps, and forming a plurality of openings in the dielectric layer to expose the portion of the conductive traces;
• forming a resist layer over the chips and the dielectric layer, and forming a plurality of openings in the resist layer to expose the first metal layers on the chips and the openings of the dielectric layer;
• forming a plurality of second metal layers in the openings of the dielectric layer and in the openings of the resist layer, so as to allow the bond pads on the chips to be electrically connected to the conductive traces on the carrier by the first and second metal layers;
• and
• removing the resist layer, performing a singulation process along the dielectric layer between the chips, and removing the carrier, so as to separate the chips and allow the conductive traces to be exposed on the non-active surfaces of the chips, thereby forming the semiconductor devices.