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US 2008/0258271 A1Published application
Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-Cheol Lee, Sang-Yeol Kang, Ki-Vin Lim, Hoon-Sang Choi, Eun-Ae Chung
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Abstract
A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.
Claims25
A multi-dielectric film comprising:
- at least one first dielectric film comprising a composite film made of zirconium-hafnium-oxide;
- and
- at least one second dielectric film comprising a metal oxide film made of amorphous metal oxide,
- wherein adjacent ones of the dielectric films are made of different materials.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- a lower electrode on the semiconductor substrate;
- a multi-dielectric film on the lower electrode and that includes at least two dielectric films;
- and
- an upper electrode on the multi-dielectric film,
- wherein each of the at least two dielectric films comprises a composite film made of zirconium-hafnium-oxide or a metal oxide film made of amorphous metal oxide and wherein adjacent ones of the dielectric films are made of different materials.
3 more elements
A method of fabricating a multi-dielectric film, the method comprising:
- forming at least one composite dielectric film comprising a composite film made of zirconium-hafnium-oxide;
- and
- forming at least one metal oxide dielectric film comprising a metal oxide film made of amorphous metal oxide, wherein adjacent ones of the dielectric films are made of different materials.
Dependencies are inferred from the claim text.