Semiconductor device with improved pads

A method for manufacturing a semiconductor device, comprising steps of:

• forming a plurality of semiconductor elements in each chip area of a semiconductor substrate, which includes a plurality of chip areas;
• forming a lower interlevel insulating film on said semiconductor substrate, said lower interlevel insulating film covering said plurality of semiconductor elements;
• forming a ferroelectric capacitor on said lower interlevel insulating film;
• forming an insulating lamination on said lower interlevel insulating film, said insulating lamination covering said ferroelectric capacitor;
• forming a multilevel wiring structure disposed in said insulating lamination;
• and
• forming a pad electrode structure disposed above said semiconductor substrate and connected to said multilevel wiring structure, said pad electrode structure containing, in said insulating lamination, a plurality of pad wiring patterns and pad via conductors interconnecting said pad wiring patterns, at least said pad wiring patterns in an uppermost level including a pad pattern and a sealing pattern surrounding said pad pattern in a loop shape with some distance from said pad pattern, at least one pad wiring pattern in a level other than the uppermost level having a continuous extended pad pattern of a size overlapping said sealing pattern, said pad via conductors including a plurality of columnar via conductors disposed in an area overlapping said pad pattern and a loop-shaped wall portion disposed in an area overlapping said sealing pattern, said pad pattern of said pad wiring pattern or said extended pad pattern and said columnar via conductors constituting a laminated bonding pad, and said extended pad pattern, said sealing pattern and said loop-shaped wall portion surrounding said laminated bonding pad to form a cup-shaped moisture resistant structure having a function of shielding moisture and hydrogen.