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US 2008/0258248 A1Published application
Image Sensor and Method for Manufacturing the Same
AssigneeDongbu HiTek Co., Ltd.
InventorTAE GYU KIM
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Abstract
An image sensor and a method for manufacturing the same are provided. A photodiode region and transistor region are vertically-integrated to improve the fill factor and resolution of the image sensor. Unit pixels can be isolated by a metal isolation layer arranged between adjacent photodiode areas.
Claims20
An image sensor, comprising:
- a semiconductor substrate having a circuit region formed therein;
- a metal wiring layer formed on the semiconductor substrate and comprising a plurality of metal wirings and an interlayer dielectric layer;
- a first conductive layer formed on the metal wiring layer electrically connected to a metal wiring of the plurality of metal wirings;
- intrinsic layer patterns formed on the metal wiring layer including the first conductive layer;
- a pixel isolation layer formed between the intrinsic layer patterns;
- and
- second conductive layers formed between the intrinsic layer patterns and the pixel isolation layer.
4 more elements
A method for fabricating an image sensor comprising:
- forming a metal wiring layer, comprising a plurality of metal wirings and an interlayer dielectric layer, on a semiconductor substrate having a circuit region formed therein;
- forming a first conductive layer on the metal wiring layer electrically connected to a metal wiring of the plurality of metal wirings;
- forming an intrinsic layer, comprising a via hole, on the metal wiring layer;
- forming a second conductive layer on the sidewalls of the via hole, and optionally also on the bottom surface of the via hole;
- and
- forming a pixel isolation layer in the via hole.
3 more elements
Dependencies are inferred from the claim text.