Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMasakazu GOTO, Shigeru KAWANAKA
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Abstract
In one aspect of the present invention, a semiconductor device may include a semiconductor substrate, a gate dielectric layer provided on the semiconductor substrate, a source region provided in the semiconductor substrate, a drain region provided in the semiconductor substrate, and a gate electrode provided on the gate dielectric layer having a metal containing layer and a polycrystalline silicon layer having an impurity ion, the polycrystalline silicon layer provided on the metal containing layer so as to cover an upper surface and side surface of the metal containing layer.
Claims11
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate dielectric layer provided on the semiconductor substrate;
- a source region provided in the semiconductor substrate;
- a drain region provided in the semiconductor substrate;
- and
- a gate electrode provided on the gate dielectric layer having a metal containing layer and a polycrystalline silicon layer having an impurity ion, the polycrystalline silicon layer provided on the metal containing layer so as to cover an upper surface and side surface of the metal containing layer.
Dependencies are inferred from the claim text.