Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
AssigneeIcemos Technology Ltd.
InventorTakeshi Ishiguro
Life of this patent
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Abstract
Methods for manufacturing trench type semiconductor devices involve refilling the trenches after high temperature processing steps are performed. The methods allow thermally unstable materials to be used as refill materials for the trenches of the device. Trench type semiconductor devices containing thermally unstable refill materials are also provided. In particular, methods of manufacturing and devices of a trench type semiconductor devices containing organic refill materials are provided.
Claims21
A method of manufacturing a trench type semiconductor device, the method comprising:
- (i) providing a semiconductor substrate having first and second main surfaces opposite to each other, the semiconductor substrate having a heavily doped region of a first conductivity type at the second main surface and having a lightly doped region of the first conductivity type at the first main surface;
- (ii) forming a terminal structure over the first main surface side;
- (iii) forming a mesa and a trench in the semiconductor substrate extending from the first main surface, with the terminal structure disposed generally over the mesa, the mesa being adjacent to the trench and having a first sidewall surface and a second sidewall surface;
- (iv) doping, with a dopant of a second conductivity type opposite to the first conductivity type, the first sidewall surface to form a first doped region of the second conductivity type;
- (v) doping, with a dopant of the second conductivity type, the second sidewall surface to form a second doped region of the second conductivity type;
- and
- (vi) following steps (i)-(v), filling the trench with at least one of a semi-insulating material, an insulating material, and a combination thereof.
A trench type semiconductor device comprising a trench filled with at least one of a semi-insulating material and an insulating material that is thermally unstable at a temperature of about 800° C. and above, the at least one of the semi-insulating material and the insulating material being an organic materials,
- the device being one of a superjunction metal-oxide-semiconductor field-effect transistor (MOSFET), a superjunction metal-semiconductor field-effect transistor (MESFET), a superjunction Schottky transistor, a superjunction insulated-gate bipolar transistor (IGBT), and a diode.
21-24. (canceled)
Dependencies are inferred from the claim text.