Semiconductor device having multi-channel and method of fabricating the same
AssigneeHynix Semiconductor Inc.
InventorDae Sik Kim
Life of this patent
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Abstract
An embodiment of the present invention relates to a semiconductor device having a multi-channel and a method of fabricating the same. In an aspect, the semiconductor device includes a semiconductor substrate in which isolation layers are formed, a plurality of trenches formed within an active region of the semiconductor substrate, and a channel active region configured to connect opposite sidewalls within each trench region and having a surface used as a channel region.
Claims31
A semiconductor device having a multi-channel, comprising:
- a semiconductor substrate in which isolation layers are formed;
- a plurality of trenches formed within an active region of the semiconductor substrate;
- and
- a channel active region configured to connect opposite sidewalls within each trench region and having a surface used as a channel region.
A semiconductor device having a multi-channel, comprising:
- a semiconductor substrate in which isolation layers are formed;
- at least a trench formed within an active region of the semiconductor substrate;
- and
- channel active regions configured to project from opposite sidewalls and to connect the other opposite sidewalls within each trench region at an intermediate depth of the trench and having a surface used as a channel region.
A method of fabricating a semiconductor device, the method comprising:
- forming a first trench in an active region of a semiconductor substrate having isolation layers formed therein;
- performing a first etch process in order to form second trenches on both sides within the first trench;
- and
- performing a second etch process in order to form a channel active region in which third trenches are interconnected at a depth deeper than that of the second trenches so that opposite sidewalls are interconnected while forming the third trenches deeper than the second trenches.
A method of fabricating a semiconductor device, the method comprising:
- forming a first trench in an active region of a semiconductor substrate having isolation layers formed therein;
- performing a first etch process in order to form a second trench at a center of the first trench;
- and
- performing a second etch process in order to form projected channel active regions on opposite sidewalls by widening a width of third trenches at a depth deeper than that of the second trenches while forming the second trenches to be the third trenches deeper than the second trenches.
A method of fabricating a semiconductor device, the method comprising:
- forming a first trench in an active region of a semiconductor substrate having isolation layers formed therein;
- performing a first etch process in order to form second trenches on both sides and at a center of the first trench;
- and
- performing a second etch process in order to form at least two channel active regions in which third trenches are interconnected at a depth deeper than that of the second trenches so that opposite sidewalls are interconnected while forming the third trenches deeper than the second trenches.
Dependencies are inferred from the claim text.