Semiconductor Device with Localized Stressor

A semiconductor device comprising:

• a substrate;
• a first gate electrode on the substrate;
• epitaxially grown regions on opposing sides of the first gate electrode, the epitaxially grown regions being offset from the first gate electrode;
• first spacers on opposing sides of the first gate electrode, the first spacers extending over at least a portion of the epitaxially grown regions, a surface of the epitaxially grown regions extending beyond the first spacers having a first recessed portion recessed below a major surface of the substrate;
• and
• first source/drain regions on opposing sides of the first gate electrode, at least a portion of the first source/drain regions being formed in the epitaxially grown regions.

A semiconductor device comprising:

• a substrate;
• a first transistor formed on the substrate, the first transistor having a first gate electrode, first spacers, and first source/drain regions;
• and
• a second transistor formed on the substrate, the second transistor having a second gate electrode, second spacers, and second source/drain regions;
• wherein only one of the first source/drain regions and the second source/drain regions comprise an epitaxially grown region;
• and
• wherein the first source/drain regions and the second source/drain regions both have recessed regions such that a top surface of the first source/drain regions extending beyond the first spacers is recessed below a top surface of the first source/drain regions under the first spacers and a top surface of the second source/drain regions extending beyond the second spacers is recessed below a top surface of the second source/drain regions under the second spacers.