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US 2008/0258231 A1Published application
Semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsHaruki YONEDA, Hideaki Fujiwara
Life of this patent
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Abstract
A semiconductor device includes an inverter having an NMOSFET and a PMOSFET having sources, drains and gate electrodes respectively, the drains being connected to each other and the gate electrodes being connected to each other, and a pnp bipolar transistor including a collector (C), a base (B) and an emitter (E), the base (B) receiving an output of the inverter.
Claims19
A semiconductor device comprising:
- an inverter including a first conductive type first field-effect transistor and a second conductive type second field-effect transistor including sources, drains and gate electrodes respectively, said drains being connected to each other and said gate electrodes being connected to each other;
- and
- a bipolar transistor including a collector, a base and an emitter, said base receiving an output of said inverter.
A semiconductor device comprising:
- an inverter including a first conductive type first field-effect transistor and a second conductive type second field-effect transistor including sources, drains and gate electrodes respectively, said drains being connected to each other and said gate electrodes being connected to each other;
- and
- a bipolar transistor including a collector, a base and an emitter, said base receiving an output of said inverter, wherein
- a first impurity region constituting said drain of either said first conductive type first field-effect transistor or said second conductive type second field-effect transistor and a second impurity region constituting said base of said bipolar transistor are so formed as to be in direct contact with each other.
1 more element
Dependencies are inferred from the claim text.