Flash memory device and fabricating method thereof

A flash memory device, characterized by the structure comprising;

• a wall-type semiconductor body region formed to be connected on a semiconductor substrate;
• a first dielectric film formed on the surface of said substrate and body region;
• a second field dielectric film, for device isolation, formed on said first dielectric film up to the vicinity of the surface of the body region;
• a body recessed with predetermined width and depth, from the body surface, for the region that recessed channels are formed in the surface of said body region;
• a recessed wall-type semiconductor body and nearby dielectrics in which the second field dielectric film and the first dielectric film are removed partly only in the vicinity of the intersecting region of the control electrode and the wall-type semiconductor body, wherein the second field dielectric film is patterned together with mask pattern performed for said body recess and the first dielectric film is formed on the sides of the body region;
• a third tunneling dielectric film formed on the surface and a part of the sides of said recessed wall-type semiconductor body;
• a charge storage node formed on a predetermined position of the vertical surface and a part of the sidewalls in said recessed region;
• the charge storage node formed so as to be isolated between cells;
• a fourth inter-electrode dielectric film and a control electrode formed successively;
• a source/drain formed on a predetermined position of said wall-type body region;
• a fifth dielectric film, a contact, and a metal layer formed with a predetermined width on said resulting structure.

A flash memory device, characterized by the structure comprising;

• a wall-type semiconductor body region formed to be connected on a semiconductor substrate;
• a first dielectric film formed on the surface of said substrate and body region;
• a second field dielectric film, for device isolation, formed on said first dielectric film up to the vicinity of the surface of the body region;
• a body recessed with predetermined width and depth, from the body surface, for the region that recessed channels are formed in the surface of said body region;
• a recessed wall-type semiconductor body in which the second field dielectric film and the first dielectric film are formed so as to be recessed with predetermined depth from the surface along with the region which a control electrode is formed, wherein the second field dielectric film is patterned together with mask pattern performed for said body recess and the first dielectric film is formed on the sides of the body region;
• a third tunneling dielectric film formed on the surface and a part of the sides of said recessed wall-type semiconductor body;
• a charge storage node formed on only a predetermined area of the vertical surface in said recessed region;
• the charge storage node formed so as to be isolated between cells;
• a fourth inter-electrode dielectric film and a control electrode formed successively;
• a source/drain formed on a predetermined position of said wall-type body region;
• a fifth dielectric film, a contact, and a metal layer formed with a predetermined width on said resulting structure.

A flash memory device, characterized by the structure comprising;

• a wall-type semiconductor body region formed to be connected on a semiconductor substrate;
• a first dielectric film formed on the surface of said substrate and body region;
• a second field dielectric film, for device isolation, formed on said first dielectric film up to the vicinity of the surface of the body region;
• a body recessed with predetermined width and depth, from the body surface, for the region that recessed channels are formed in the surface of said body region;
• a recessed wall-type semiconductor body in which the second field dielectric film and the first dielectric film are formed so as to be recessed with predetermined depth from the surface along with the region which a control electrode is formed, wherein the second field dielectric film is patterned together with mask pattern performed for said body recess and the first dielectric film is formed on the sides of the body region;
• a third tunneling dielectric film formed on the surface and a part of the sides of said recessed wall-type semiconductor body;
• a charge storage node formed on the vertical surface and sidewalls except for the bottom surface of said recessed region;
• the charge storage node formed so as to be isolated between cells;
• a fourth inter-electrode dielectric film and a control electrode formed successively;
• a source/drain formed on a predetermined position of said wall-type body region;
• a fifth dielectric film, a contact, and a metal layer formed with a predetermined width on said resulting structure.

A method for fabricating a flash memory device, comprising the steps of:

• forming a first dielectric film and a second field dielectric film on a wall-type semiconductor body region formed to be connected on a semiconductor substrate;
• forming a third dielectric film for a recess region formation, and etching the wall-type body exposed after removing the third dielectric film, which is previously formed for a recess region, through a mask work, so as to be formed with shallower depth than the finally recessed depth,
• forming a fourth dielectric film after performing the surface treatment process for said recessed wall-type semiconductor body;
• forming a charge storage node on said resulting structure, that is forming a spacer type charge storage node through anisotrophic etching;
• etching the semiconductor body exposed after removing said fourth dielectric film, and forming the corner formed near the floor of the finally recessed region as a round shape;
• forming a fifth tunneling dielectric film after performing the surface treatment process for said recessed semiconductor body;
• forming a sixth inter-electrode dielectric film on said resulting structure and then forming a control electrode;
• etching a charge storage node exposed after removing said third dielectric film, up to a predetermined depth from the body surface which is not recessed;
• forming a source/drain, an interlayer dielectric film, a contact, and a metal layer in order on said wall-type body region.