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US 2008/0258191 A1Published application
Capacitor device providing sufficient reliability
AssigneeFujitsu Limited
InventorsJohn D. Baniecki, Masatoshi Ishii, Kazuaki Kurihara
Life of this patent
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Abstract
A capacitor device includes a dielectric layer configured to have a composition represented as (Ba1-x, Srx)Ti1-zScyO3+δ (0<x<1, 0.01<z<0.3, 0.005<y<0.02, −0.5<δ<0.5) and an in-plane deformation ∈ of crystal that satisfies −0.4<<0.4, an upper electrode and a lower electrode that are placed on respective sides of the dielectric layer, and a substrate on which the upper electrode, the lower electrode, and the dielectric layer are disposed.
Claims10
A capacitor device, comprising:
- a dielectric layer configured to have a composition represented as (Ba1-x, Srx)Ti1-zScyO3+δ (0<x<1, 0.01<z<0.3, 0.005<y<0.02, −0.5<δ<0.5) and an in-plane deformation ∈ of crystal that satisfies −0.4<∈<0.4;
- an upper electrode and a lower electrode that are placed on respective sides of the dielectric layer;
- and
- a substrate on which the upper electrode, the lower electrode, and the dielectric layer are disposed.
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A semiconductor device, comprising:
- a semiconductor element formed in a substrate made of a semiconductor material;
- and
- a capacitor device coupled to the semiconductor element, the capacitor device including a dielectric layer, an upper electrode, and a lower electrode, the dielectric layer configured to have a composition represented as (Ba1-x, Srx)Ti1-zScyO3+δ (0<x<1, 0.01<z<0.3, 0.005<y<0.02, −0.5<δ<0.5) and an in-plane deformation ∈ of crystal that satisfies −0.4<∈<0.4, and the upper electrode and the lower electrode being placed on respective sides of the dielectric layer.
A method of making a capacitor device, comprising:
- forming a lower electrode on a substrate;
- forming a dielectric layer having a composition represented as (Ba1-x, Srx)Ti1-zScyO3+δ (0<x<1, 0.01<z<0.3, 0.005<y<0.02, −0.5<δ<0.5) and an in-plane deformation ∈ of crystal that satisfies −0.4<∈<0.4;
- and
- forming an upper electrode on the dielectric layer.
1 more element
Dependencies are inferred from the claim text.