Hybrid Substrates and Methods for Forming Such Hybrid Substrates

A method of forming a semiconductor structure, the method comprising:

• bonding a first semiconductor layer of a first crystal orientation with a second semiconductor layer of a second crystal orientation differing from the first crystal orientation to define an interface;
• defining a plurality of openings each having sidewalls extending from a top surface of the first semiconductor layer to the second semiconductor layer;
• applying dielectric regions to the sidewalls of each of the openings;
• epitaxially growing an island of semiconductor material having the second crystal orientation of the second semiconductor layer to fill each of the openings;
• implanting oxygen-containing ions into the bonded first and second semiconductor layers to form an oxygen concentration profile overlapping the interface or between the interface and the top surface of the first semiconductor layer;
• and
• heating the oxygen concentration profile, the first semiconductor layer, and the epitaxially grown islands at a high temperature to form a first insulating layer comprising oxygen from the oxygen concentration profile and material from at least one of the first semiconductor layer and the epitaxially grown islands.

A method of forming a semiconductor structure, the method comprising:

• bonding a first dielectric layer carried on a first semiconductor layer of a first crystal orientation with a second dielectric layer carried on a second semiconductor layer of a second crystal orientation differing from the first crystal orientation;
• defining a plurality of openings each having sidewalls extending from a top surface of the first semiconductor layer through the first and second dielectric layers to the second semiconductor layer;
• applying dielectric regions to the sidewalls of each of the openings;
• epitaxially growing an island of semiconductor material having the second crystal orientation of the second semiconductor layer to fill each of the openings;
• and
• forming an insulating layer at a depth that divides the first semiconductor layer into a plurality of device regions between the insulating layer and the top surface and a plurality of body regions between the insulating layer and the first and second dielectric layers such that each of the body regions is aligned with one of the device regions between an adjacent pair of the dielectric regions.

A method of forming a semiconductor structure using a semiconductor layer comprising a juxtaposed plurality of islands of at least two different crystal orientations, the regions being substantially co-planar and of substantially equal thicknesses, and adjacent regions separated by one of a plurality of dielectric regions, the method comprising:

• bonding a first dielectric layer on the semiconductor layer with a second dielectric layer carried on a handle substrate;
• transferring the semiconductor layer to the handle substrate;
• and
• forming an insulating layer that divides each of the islands into a device region between the insulating layer and a top surface of the transferred semiconductor layer and a body region between the insulating layer and the first and second dielectric layers such that each of the body regions is aligned with one of the device regions between an adjacent pair of the dielectric regions.