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US 2008/0258170 A1Published application
Light emitting diode structure
AssigneeEverlight Electronics Co., Ltd.
InventorChin-Yuan Hsu
Life of this patent
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Abstract
The light emitting diode structure includes a substrate, a first electricity semiconductor layer formed on the substrate, a light-emitting layer formed on the first electricity semiconductor layer, a second electricity semiconductor layer formed on the light-emitting layer, a barrier layer formed on the second electricity semiconductor layer, and a contact layer formed on the barrier layer.
Claims14
A light emitting diode structure comprising:
- a substrate;
- a first electricity semiconductor layer formed on the substrate;
- a light-emitting layer formed on the first electricity semiconductor layer;
- a second electricity semiconductor layer formed on the light-emitting layer;
- a barrier layer formed on the second electricity semiconductor layer;
- and
- a contact layer formed on the barrier layer.
4 more elements
A light emitting diode structure comprising:
- a semiconductor laminated layers having a N-type semiconductor layer, a P-type semiconductor layer, and a light-emitting layer disposed between the N-type semiconductor layer and the P-type semiconductor layer;
- a barrier layer formed on the semiconductor laminated layer;
- and
- a contact layer formed on the barrier layer.
1 more element
Dependencies are inferred from the claim text.